View IRFH7936PBF_8082723.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

hexfet power mosfet notes through are on page 9 applications synchronous mosfet for notebook processor power synchronous rectifer mosfet for isolated dc-dc converters in networking systems benefits very low r ds(on) at 4.5v v gs low gate charge fully characterized avalanche voltage and current 100% tested for r g lead-free (qualified up to 260c reflow) rohs compliant (halogen free) low thermal resistance large source lead for more reliable soldering v dss r ds(on) max qg 30v 4.8m ? @v gs = 10v 17nc absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c = 25c continuous drain current, v gs @ 10v i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear deratin g factor w/c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r jc junction-to-case ??? 5.6 r ja junction-to-ambient ??? 40 c/w c w a v max. 20 54 160 20 30 16 -55 to + 150 3.1 0.025 2.0
pqfn 5x6 mm

IRFH7936PBF
s d g static @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 0.022 ??? v/c r ds(on) static drain-to-source on-resistance ??? 4.1 4.8 ??? 6.0 6.8 v gs(th) gate threshold voltage 1.35 1.8 2.35 v ? v gs(th) gate threshold voltage coefficient ??? -6.3 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 48 ??? ??? s q g total gate charge ??? 17 26 q gs1 pre-vth gate-to-source charge ??? 4.5 ??? q gs2 post-vth gate-to-source charge ??? 2.0 ??? q gd gate-to-drain charge ??? 5.5 ??? q godr gate charge overdrive ??? 5.0 ??? see fig.17 & 18 q sw switch charge (q gs2 + q gd ) ??? 7.5 ??? q oss output charge ??? 9.0 ??? nc r g gate resistance ??? 1.5 2.3 ? t d(on) turn-on delay time ??? 17 ??? t r rise time ??? 12 ??? t d(off) turn-off delay time ??? 19 ??? t f fall time ??? 7.0 ??? c iss input capacitance ??? 2360 ??? c oss output capacitance ??? 450 ??? c rss reverse transfer capacitance ??? 210 ??? avalanche characteristics parameter units e as sin g le pulse avalanche ener gy mj i ar avalanche current a diode characteristics parameter min. t y p. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 14 21 ns q rr reverse recovery charge ??? 15 23 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) ??? i d = 16a v gs = 0v v ds = 15v 16 ? = 1.0mhz v gs = 4.5v, i d = 16a v gs = 4.5v typ. ??? r g =1.8 ? v ds = 15v, i d = 16a v ds = 24v, v gs = 0v, t j = 125c m ? v ds = 24v, v gs = 0v v ds = 15v t j = 25c, i f = 16a, v dd = 15v di/dt = 300a/s see fig.16 t j = 25c, i s = 16a, v gs = 0v showing the integral reverse p-n junction diode. v gs = 20v v gs = -20v mosfet symbol v ds = 16v, v gs = 0v v dd = 15v, v gs = 4.5v i d = 16a see fig.15 max. 28 conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 20a ??? ??? ??? ??? a 3.9 160 v ds = v gs , i d = 50a ns pf nc na a conditions
IRFH7936PBF
fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.9v bottom 2.7v 60s pulse width tj = 25c 2.7v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 2.7v 60s pulse width tj = 150c vgs top 10v 5.0v 4.5v 3.5v 3.3v 3.0v 2.9v bottom 2.7v 1 2 3 4 5 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 20a v gs = 10v
IRFH7936PBF
fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0 5 10 15 20 25 30 35 40 45 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v i d = 16a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100sec 1msec 10msec dc
IRFH7936PBF
fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature fig 10. threshold voltage vs. temperature 25 50 75 100 125 150 t a , ambient temperature (c) 0 5 10 15 20 i d , d r a i n c u r r e n t ( a ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.5 2.0 2.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 50a 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a ri (c/w) i (sec) 1.6431 0.000308 4.6179 0.017766 16.903 0.9436 16.855 40.8 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri a a 4 4 r 4 r 4
IRFH7936PBF
fig 13. maximum avalanche energy vs. drain current fig 12. on-resistance vs. gate voltage fig 14b. unclamped inductive waveforms fig 14a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f
1 0.1 + - 0 2 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 2 4 6 8 10 12 14 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 20a t j = 25c t j = 125c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 180 200 220 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 3.0a 5.1a bottom 16a
IRFH7936PBF
d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 17. gate charge test circuit fig 16. ! " #$"#%"&' for n-channel hexfet power mosfets

? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period (
( + - + + + - - - ? !"# ?
$%&%% ? "'' ? %&%%(
& fig 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr
IRFH7936PBF
) pqfn part marking marking code (per marking spec.) xxxx xywwx xxxxx international rectifier logo part number date code assembly site code (per scop 200-002) pin 1 identifier lot code (eng mode - min. last 4 digits of eati #) (prod mode - 4 digits spn code) top marking (laser) 6 !&+!%)$!
! ( $!"#(,$!! %!! &''((( )' -' pqfn 5x6 option "e" package details
IRFH7936PBF
*
repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.22mh, r g = 25 ? , i as = 16a. pulse width 400s; duty cycle 2%. rthjc is guaranteed by design when mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of fr-4 material. pqfn tape and reel

! !"!!# ! $$! %!! &''((( )'(%!* ' !&+!%)$!
! ( $!"#(,$!! %!! &''((( )' -' date comments 08/08/2013 ? updated the package drawing, on page 1. ? updated the package outline drawing, on page 8. ? this drawing change is related to pcn "hana-gtbf-gem 5x6 pqfn public." re v i si o n hi sto r y

▲Up To Search▲

Price & Availability of IRFH7936PBF

	To Download IRFH7936PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .